ELM341503A-N Datasheet, PDF (3/7 Pages) ELM Electronics – Dual N-channel MOSFET with schottky diode

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ELM341503A-N
Halogen-Free & Lead-Free
■Typic_Ta_yl_pe_icle_ac_l t_Cr_hi_ac_ra_al_ca_ten_rid_stt_ich_se_:r_Qm₂al characteristics (Q2)
Output Characteristics
25 _{VGS = 10V}
VGS = 4.5V
20
Transfer Characteristics
25
20
15
15
VGS = 3V
10
5
0
0
0.5
1.0
1.5
2.0
2.5
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) ╳ _2.0
RDS(ON) ╳ 1.8
RDS(ON) ╳ 1.6
RDS(ON) ╳ ^1.4
RDS(ON) ╳ _1.2
RDS(ON) ╳ 1.0
RDS(ON) ╳ _0.8
RDS(ON) ╳
RDS(ON) ╳
0.6
VGS=10V
ID=9A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 _{Characteristics}
8
ID=9A
VDS=15V
6
4
2
10
TJ=125°C
TJ=25°C
5
TJ=-20°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
1.50E+03
1.20E+03
Ciss
9.00E+02
6.00E+02
3.00E+02
Coss
0.00E+00
0
Crss
5
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
TJ =150°C
TJ =25° C
1.0E-03
0
0
4
8
12
16
20
Qg , Total Gate Charge
1.0E-04
0.1 0.2
0.3
0.4
0.5
0.6
0.7
VSD, Source-To-Drain Voltage(V)
REV 0.9
Oct-28-2009
4
7-3