ELM341503A-N Datasheet, PDF (1/7 Pages) ELM Electronics – Dual N-channel MOSFET with schottky diode

Dual N-channel MOSFET with schottky diode
ELM341503A-N
■General description
ELM341503A-N uses advanced trench
technology to provide excellent Rds(on),
low gate charge and low gate resistance.
■Features
Q2
Q1
• Vds=30V
• Vds=30V
• Id=9A(Vgs=10V)
• Id=8A(Vgs=10V)
• Rds(on)<15.8mΩ(Vgs=10V) • Rds(on)<21.0mΩ(Vgs=10V)
• Rds(on)<20.0mΩ(Vgs=4.5V) • Rds(on)<32.0mΩ(Vgs=4.5V)
■Maximum absolute ratings
Ta=25°C. Unless otherwise noted.
Parameter
Limit
Symbol
Unit Note
Q2
Q1 Schottky
Drain-source voltage
Vds
30
30
V
Gate-source voltage
Vgs
±20
±20
V
Ta=25°C
9
8
Continuous drain current
Id
A
Ta=70°C
7
6
Pulsed drain current
Idm
35
30
A
1
Avalanche current
Ias
29
21
A
Avalanche energy
L=0.1mH
Eas
43
23
mJ
Reverse current
Vr=25V
Ir
0.05
mA
Forward voltage
If=1A
Vf
0.45
V
Power dissipation
Tc=25°C
Pd
Tc=70°C
2.0
W
1.28
Junction and storage temperature range
Tj, Tstg
-55 to 150
°C
NOTE : 1. Pulsed width limited by maximum junction temperature.
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
62.5
Unit
Note
°C/W
■Pin configuration
■Circuit
SOP-8(TOP VIEW) _{Pin No.}
Pin name
1
DRAIN1
1
8
1
8
2
DRAIN1
2
Q1
7
2
7
3
GATE2
3
6
4
SOURCE2
3
6
4
5
DRAIN2/SOURCE1
5
Q2
4
5
6
DRAIN2/SOURCE1
7
DRAIN2/SOURCE1
8
GATE1
7-1