ELM14606AA-N Datasheet, PDF (2/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM14606AA-N
■Electrical Characteristics (N-ch)
Ta=25°C. Unless otherwise noted.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
30
V
Zero gate voltage drain current
Idss Vds=24V, Vgs=0V
Ta=55°C
0.002 1.000
μA
5.000
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
1.0 1.9 3.0 V
On state drain current
Id(on) Vgs=4.5V, Vds=5V
20
A
Static drain-source on-resistance
Vgs=10V, Id=6.9A
Rds(on)
Ta=125°C
22.5 28.0
31.3 38.0 mΩ
Vgs=4.5V, Id=5.0A
34.5 42.0
Forward transconductance
Gfs Vds=5V, Id=6.9A
10.0 15.4
S
Diode forward voltage
Vsd Is=1A
0.76 1.00 V
Max.body-diode continuous current Is
3A
DYNAMIC PARAMETERS
Input capacitance
Ciss
680 820 pF
Output capacitance
Coss Vgs=0V, Vds=15V, f=1MHz
102
pF
Reverse transfer capacitance
Crss
77
pF
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
3.0 3.6 Ω
SWITCHING PARAMETERS
Total gate charge (10V)
Qg
13.84 16.60 nC
Total gate charge (4.5V)
Gate-source charge
Qg
Vgs=10V, Vds=15V, Id=6.9A
Qgs
6.74 8.10 nC
1.82
nC
Gate-drain charge
Qgd
3.20
nC
Turn-on delay time
td(on)
4.6 7.0 ns
Turn-on rise time
tr Vgs=10V, Vds=15V
4.1 6.0 ns
Turn-off delay time
td(off) RL=2.2Ω, Rgen=3Ω
20.6 30.0 ns
Turn-off fall time
tf
5.2 8.0 ns
Body-diode reverse recovery time
trr If=6.9A, dIf/dt=100A/μs
16.5 20.0 ns
Body-diode reverse recovery charge Qrr If=6.9A, dIf/dt=100A/μs
7.8 10.0 nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
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