ELM14606AA-N Datasheet, PDF (1/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM14606AA-N
■General Description
ELM14606AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
N-channel
• Vds=30V
• Id=6.9A(Vgs=10V)
• Rds(on) < 28mΩ(Vgs=10V)
• Rds(on) < 42mΩ(Vgs=4.5V)
P-channel
Vds=-30V
Id=-6A(Vgs=-10V)
Rds(on) < 35mΩ(Vgs=-10V)
Rds(on) < 58mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Avalanche current
Repetitive avalanche energy 0.1mH
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Iar
Ear
Tj,Tstg
Ta=25°C. Unless otherwise noted.
N-ch (Max.) P-ch (Max.) Unit Note
30
-30
V
±20
±20
V
6.9
-6.0
A1
5.8
-5.0
30
-30
A2
2.00
2.00
W
1.44
1.44
15
20
A2
11
20
mJ 2
-55 to 150
-55 to 150 °C
■Thermal Characteristics
Parameter
Symbol Device Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Rθja
Steady-state
48.0
N-ch 74.0
Maximum junction-to-lead
Steady-state Rθjl
35.0
Maximum junction-to-ambient
t≤10s
Rθja
48.0
Maximum junction-to-ambient
Steady-state
P-ch 74.0
Maximum junction-to-lead
Steady-state Rθjl
35.0
Max.
62.5
110.0
40.0
62.5
110.0
40.0
Unit Note
°C/W
1
°C/W
°C/W 3
°C/W
1
°C/W
°C/W 3
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE2
GATE2
SOURCE1
GATE1
DRAIN1
DRAIN1
DRAIN2
DRAIN2
■Circuit
• N-ch
• P-ch
D2
D1
G2
G1
S2
S1
7-1