3KE13C Datasheet, PDF (3/4 Pages) EIC discrete Semiconductors – BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
Breakdown Voltage @ It
W orking Peak
( Note 1 )
Reverse
TYPE
Voltage
VBR (V)
It
VRWM
Min.
Max.
(mA)
(V)
Maximum
Reverse Leakage
@ VRWM
IR
(µA)
3KE91C
81.9
100
1.0
73.7
5.0
3KE91CA
86.5
95.5
1.0
77.8
5.0
3KE100C
90.0
110
1.0
81.0
5.0
3KE100CA
95.0
105
1.0
85.5
5.0
3KE110C
99.0
121
1.0
89.2
5.0
3KE110CA
105
116
1.0
94.0
5.0
3KE120C
108
132
1.0
97.2
5.0
3KE120CA
114
126
1.0
102
5.0
3KE130C
117
143
1.0
105
5.0
3KE130CA
124
137
1.0
111
5.0
3KE150C
135
165
1.0
121
5.0
3KE150CA
143
158
1.0
128
5.0
3KE160C
144
176
1.0
130
5.0
3KE160CA
152
168
1.0
136
5.0
3KE170C
153
187
1.0
138
5.0
3KE170CA
162
179
1.0
145
5.0
3KE180C
162
198
1.0
146
5.0
3KE180CA
171
189
1.0
154
5.0
3KE200C
180
220
1.0
162
5.0
3KE200CA
190
210
1.0
171
5.0
3KE220C
198
242
1.0
175
5.0
3KE220CA
209
231
1.0
185
5.0
3KE250C
225
275
1.0
202
5.0
3KE250CA
237
263
1.0
214
5.0
3KE300C
270
330
1.0
243
5.0
3KE300CA
285
315
1.0
256
5.0
3KE350C
315
385
1.0
284
5.0
3KE350CA
332
368
1.0
300
5.0
3KE400C
360
440
1.0
324
5.0
3KE400CA
380
420
1.0
342
5.0
3KE440C
396
484
1.0
356
5.0
3KE440CA
418
462
1.0
376
5.0
Note:
( 1 ) VBR measured after It applied for 300 µs., It = square wave pulse or equivalent.
Maximum
Reverse
Current
IRSM
(A)
22.8
24.0
20.8
22.0
19.0
19.8
17.4
18.2
16.0
16.8
14.0
14.4
13.0
13.6
12.4
12.8
11.6
12.2
10.4
11.0
8.6
9.2
10
10
10
10
8.0
8.0
8.0
8.0
4.8
5.0
Maximum
Clamping
Voltage @ IRSM
VRSM
(V)
Maximum
Temperature
Co-efficient
of VBR
(% / °C)
131
0.106
125
0.106
144
0.106
137
0.106
158
0.107
152
0.107
173
0.107
165
0.107
187
0.107
179
0.107
215
0.108
207
0.108
230
0.108
219
0.108
244
0.108
234
0.108
258
0.108
246
0.108
287
0.108
274
0.108
344
0.108
328
0.108
360
0.110
344
0.110
430
0.110
414
0.110
504
0.110
482
0.110
574
0.110
548
0.110
631
0.110
602
0.110
Page 3 of 4
Rev. 04 : March 25, 2005