3EZ100D10_07 Datasheet, PDF (3/3 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

Certificate TH97/10561QM
Certificate TW00/17276EM
ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
TYPE
Nominal Zener
Voltage
VZ @ IZT
IZT
(V)
(mA)
Maximum Zener
Impedance
ZZT @ IZT ZZK @ IZK
(Ω)
(Ω)
IZK
(mA)
3EZ91D10
3EZ100D10
3EZ110D10
3EZ120D10
3EZ130D10
3EZ140D10
3EZ150D10
3EZ160D10
3EZ170D10
3EZ180D10
3EZ190D10
3EZ200D10
91
8.2
115
3000
0.25
100
7.5
160
3000
0.25
110
6.8
225
4000
0.25
120
6.3
300
4500
0.25
130
5.8
375
5000
0.25
140
5.3
475
5000
0.25
150
5.0
550
6000
0.25
160
4.7
625
6500
0.25
170
4.4
650
7000
0.25
180
4.2
700
7000
0.25
190
4.0
800
8000
0.25
200
3.7
875
8000
0.25
Notes :
( 1 ) Suffix " 10 " indicates ± 10% tolerance, suffix " 5 " indicates ± 5% tolerance.
( 2 ) " EZ " will be omitted in marking on the diode
Fig. 2 Maximum Surge Power
Maximum Reverse
Leakage Current
IR @ VR
(μA)
(V)
0.5
69.2
0.5
76.0
0.5
83.6
0.5
91.2
0.5
98.8
0.5
106.4
0.5
114.0
0.5
121.6
0.5
130.4
0.5
136.8
0.5
144.8
0.5
152.0
Maximum DC
Zener Current
IZM
(mA)
30
27
25
22
21
19
18
17
16
15
14
13
Page 3 of 3
Rev. 04 : November5, 2007