3EZ100D10_07 Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

Certificate TH97/10561QM
Certificate TW00/17276EM
3EZ3.9D10 ~ 3EZ200D10
SILICON ZENER DIODES
VZ : 3.9 - 200 Volts
PD : 3 Watts
DO - 41
FEATURES :
* Complete Voltage Range 3.9 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at TL = 75 °C (Note1)
Maximum Forward Voltage at IF = 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
0.108 (2.74)
0.078 (1.99)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Symbol
PD
VF
RθJA
TJ
Ts
Value
3.0
1.5
60
- 55 to + 175
- 55 to + 175
Unit
W
V
K/W
°C
°C
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 Power Temperature Derating Curve
5
L = LEAD LENGTH
4
L = 1/8"
TO HEAT SINK
3
L = 3/8"
2
L = 1"
1
0
0
40
80
120
160
200
TL, LEAD TEMPERATURE (°C)
Page 1 of 3
Rev. 04 : November5, 2007