RGP02-12E_06 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – HIGH VOLTAGE

RATING AND CHARACTERISTIC CURVES ( RGP02-12E - RGP02-20E )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
Trr
+ 0.5
+
50 Vdc
(approx)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1Ω
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
0.5
0.4
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
25
8.3 ms SINGLE HALF SINE WAVE
20
Ta = 50 °C
0.3
15
0.2
10
0.1
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
5
01
2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
1.0
Pulse Width = 300 μs
2% Duty Cycle
TJ = 25 °C
0.1
10
TJ = 100 °C
1.0
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 03 : February 20, 2006