RGP02-12E_06 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH VOLTAGE

RGP02-12E // 20E
PRV : 1200 - 2000 Volts
Io : 0.5 Ampere
HIGH VOLTAGE
DO - 41
FEATURES :
* Glass passivated junction
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Peak Forward Surge Current 8.3 ms. Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at 0.1 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
RGP02-
12E
RGP02-
14E
RGP02-
16E
RGP02-
18E
RGP02-
20E
V_RRM
1200 1400 1600 1800 2000
V_RMS
840 980 1120 1260 1400
V_DC
1200 1400 1600 1800 2000
UNIT
V
V
V
I_F(AV)
0.5
A
I_FSM
V_F
I_R
I_R(H)
Trr
C_J
T_J
T_STG
20
A
1.8
V
5.0
μA
50
μA
300
ns
5.0
pf
- 65 to + 150
°C
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0DC
Page 1 of 2
Rev. 03 : February 20, 2006