RB150_05 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RATING AND CHARACTERISTIC CURVES ( RB150 - RB158 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
1.5
1.0
0.5
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
0
0 20 40 60 80 100 120 140
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
40
35
30
25
20
15
10
5
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
10
1.0
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0.1
TJ = 25 °C
0.01
0.6
0.7 0.8 0.9 1.0 1.1 1.2 1.3
FORWARD VOLTAGE, VOLTS
0.01
0
20
40
60
80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005