RB150_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RB150 - RB158
SILICON BRIDGE RECTIFIERS
PRV : 50 - 800 Volts
Io : 1.5 Amperes
RB
0.71 (18.0)
0.63 (16.0)
FEATURES :
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.825 (20.95)
0.605 (15.36)
0.500 (12.7)
MIN.
0.105 (2.66)
0.085 (2.16)
AC
+ ^AC
0.035 (0.89)
0.028 (0.71)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01)
0.236 (5.99)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL RB150 RB151 RB152 RB154 RB156 RB158 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage per Diode at IF = 1 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
50
100
200
400
600
800
V
VRMS
35
70
140
280
420
560
V
VDC
50
100
200
400
600
800
V
IF(AV)
1.5
A
IFSM
40
A
VF
IR
IR(H)
RθJL
TJ
TSTG
0.95
10
100
15
- 40 to + 140
- 40 to + 140
V
µA
µA
°C/W
°C
°C
Note :
1 ) Thermal resistance from Junction to lead mounted on P.C. Board with 0.47" X 0.47" ( 12mm X 12mm ) Cu pads.
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Rev. 02 : March 24, 2005