OSE-1L7 Datasheet, PDF (1/4 Pages) Opto Electronics Co,. LTD – INFRARED EMITTING DIODE

■ General Description
The OSE-1L7 are high-power GaAs IREDs mounted in
a clear plastic package. With lensed package and cup type
frame, these efficient devices have narrow beam angle
OSE-1L7
INFRARED EMITTING DIODE
■ Features
˙Narrow beam angle
˙High output power
˙Available for pulse operating
˙Meet RoHS
■ Applications
˙Emitters of remote control
˙Fiber optic communications
˙Smoke sensors
■ MAXIMUM RATINGS
Item
Symbol
Rating
Pulse forward current *1
IFP
1
Forward direct current
IFM
100
Reverse voltage
VRM
4
Operating temperature.
Topr
-25 ~ +75
Storage temperature.
Tstg
-25 ~ +100
Power dissipation
Pd
170
Soldering temperature. *2
Tsol
260
*1 Tw = 100usec、T = 10msec
*2 For MAX. 5 secends at the position of 5mm from the package
■ ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Radiant intensity
Ie
Forward voltage
VF
Reverse current
IR
Peak emission wavelength
λp
Spectral band width @ 50%
Δλ
Rise time / Fall time
tr / tf
Viewing angle
∆θ
Condition
IF = 50mA
IF = 100mA
VR = 4V
IF = 50mA
IF = 50mA
IF = 50mA
IF = 50mA
(Ta=25℃)
Unit
A
mA
V
℃
℃
mW
℃
(Ta=25℃)
Min
Typ
Max
Unit
30
50
mW/sr
1.35
1.7
V
10
uA
940
nm
50
nm
80 / 180
ns
±17.5
deg.
光電企業有限公司
March 2006
Rev 1.1