DG406BP Datasheet, PDF (8/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG406BP25
1125
Conditions:
1000 ^{Tj = 125˚C, IFGM = 30A,}
C_S = 1.0µF,
875
R_S = 10 Ohms,
dI_T/dt = 300A/µs,
dI_F/dt = 30A/µs
750
V_D = 2000V
V_D = 1500V
625
500
V_D = 1000V
375
250
125
0
0
250
500
750
1000
1250
On-state current I_T - (A)
Fig.10 Turn-on energy vs on-state current
2500
2000
1500
Conditions:
T_j = 125˚C, I_T = 1000A,
C_S = 1.0µF, R_S = 10 Ohms
dI/dt = 300A/µs,
dI_FG/dt = 30A/µs
1250
Conditions:
I_T = 1000A,
T_j = 125˚C,
C_S = 1.0µF
1000 ^R_S ^{= 10 Ohms}
I_FGM = 30A,
dI_FG/dt = 30A/µs
1000
500
V_D = 2000V
V_D = 1500V
V_D = 1000V
750
V_D = 2000V
500 _{VD = 1500V}
250 ^VD ^{= 1000V}
0
0
20
40
60
Peak forward gate current I_FGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
80
0
0
100
200
300
Rate of rise of on-state current dI_T/dt - (A/µs)
FIG 12 TURN ON ENERGY RATE OF
Fig.12 Turn-on energy vs rate of rise of on-state current
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