DG406BP Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG406BP25
2500
2000
Conditions:
T_j = 125˚C,
V_DM = V_DRM,
dI_GQ/dt = 30A/µs
1500
1000
C_S = 0.5µF
C_S = 1.0µF
C_S = 1.5µF
C_S = 2.0µF
500
0
0
250
500
750
1000
1250
On-state current I_T - (A)
FIG 19 TURN OFF ENERGY ON STATE CURRENT
Fig.19 Turn-off energy vs on-state current
2.0
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
1.5
T_j = 125˚C
1500
1.0
T_j = 25˚C
0.5
12/19
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.20 Gate fall time vs on-state current