GP801DDS18 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Dual Switch Low VCE(SAT) IGBT Module

GP801DDS18
1800
1600
1400
PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1
1200
1000
800
600
400
Conditions:
200 ^Tj ^{= 125˚C, T}case ^{= 75˚C}
R_g = 2.2Ω, V_CC = 800V
0
1
10
50
f_max - (kHz)
Fig. 11 3 Phase inverter operating frequency
1400
1200
1000
800
600
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 12 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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