GP801DDS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Dual Switch Low VCE(SAT) IGBT Module

GP801DDS18
Replaces January 2000 version, DS235-3.0
FEATURES
s Low V_CE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 800A Per Arm
GP801DDS18
Dual Switch Low V_CE(SAT) IGBT Module
DS5235-4.1 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
12(C²)
2(C₂)
7(C¹)
4(E₂)
1(E₁)
11(G²)
10(E²)
3(C₁)
5(E¹)
6(G¹)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V_CE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DDS18
Note: When ordering, please use the whole part number.
Fig. 1 Dual switch circuit diagram
5
6
3
1
7
8
9
12
4
2
11
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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