GP800FSS12 Datasheet, PDF (7/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP800FSS12
180
Conditions:
160
T_case = 25˚C,
V_CE = 600V,
V_GE = ±15V
A
140
B
120
C
100
80
60
40
A : R_g = 6.8Ω
20
B : R_g = 4.7Ω
C : R_g = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig.9 Typical turn-off energy vs collector current
250
Conditions:
T_case = 125˚C,
V_CE = 600V,
200 ^{VGE = ±15V}
A
B
150
C
100
50
A : R_g = 6.8Ω
B : R_g = 4.7Ω
C : R_g = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig.10 Typical turn-off energy vs collector current
70
Conditions:
V_CE = 600V,
60
V_GE = 15V,
R_g = 3.3Ω
50
T_case = 125˚C
40
30
T_case = 25˚C
20
10
0
0
200
400
600
800
Collector current, I_C (A)
Fig.11 Typical diode reverse recovery charge vs collector current
2000
1800
1600
1400
t_d(off)
t_f
Conditions:
T_case = 125˚C,
V_CE = 600V
V_GE = 15V
R_g = 3.3Ω
1200
1000
800
t_d(on)
600
400
200
0
0
t_r
100 200 300 400 500 600 700 800
Collector currrent, I_C - (A)
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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