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| GP800FSS12 Datasheet, PDF (4/11 Pages) Dynex Semiconductor – Powerline N-Channel Single Switch IGBT Module Preliminary Information | |||
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GP800FSS12
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
t
Turn-off delay time
d(off)
tf
Fall time
EOFF Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
Q
rr
Diode reverse recovery charge
Qrr
Diode reverse recovery charge
Tcase = 125ËC unless stated otherwise.
td(off)
Turn-off delay time
tf
Fall time
E
Turn-off energy loss
OFF
t
Turn-on delay time
d(on)
tr
Rise time
EON Turn-on energy loss
Qrr
Diode reverse recovery charge
Q
Diode reverse recovery charge
rr
Conditions
IC = 800A
V
GE
=
±15V
VCE = 600V
RG(ON) = RG(OFF) = 3.3â¦
L ~ 100nH
I = 800A
F
VR = 50%VCES,
dIF/dt = 2000A/µs
I = 800A
C
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 3.3â¦
L ~ 100nH
I = 800A
F
VR = 50%VCES,
dIF/dt = 2000A/µs
Min. Typ. Max. Units
- 1100 1300 ns
- 150 200 ns
- 130 170 mJ
- 800 900 ns
- 320 400 ns
-
90 130 mJ
-
150 200 µC
-
170
-
µC
- 1300 1500 ns
- 200 250 ns
- 170 250 mJ
- 950 1200 ns
- 350 450 ns
- 150 200 mJ
- 200 260 µC
-
225
-
µC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
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