GP1201FSS18 Datasheet, PDF (6/9 Pages) Dynex Semiconductor – Single Switch Low V IGBT Module

GP1201FSS18
2400
2200
2000
1800
T_j = 25˚C
1600
1400
1200
T_j = 125˚C
1000
800
600
400
200
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 7 Diode typical forward characteristics
3000
2500
2000
1500
1000
T_case = 125˚C
500 ^Vge ^{= ±15V}
R_g(off) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, V_ce - (V)
Fig. 8 Reverse bias safe operating area
2000
100
Diode
10
Transistor
1
0.1
1
10
100
1000
Pulse width, t_p - (ms)
Fig. 9 Transient thermal impedance
10000
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com