GP1201FSS18 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – Single Switch Low V IGBT Module

GP1201FSS18
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 _{Tcase = 25˚C}
2000
V_ge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
2400
Common emitter
2200 _{Tcase = 125˚C}
2000
V_ge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
1.2
T_case = 125˚C
1.1 _{VGE = 15V}
1.0
V_CE = 900V
R_G = 2.2Ω
L = 50nH
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
200
400
600
800
Collector current, I_C - (A)
E_OFF
E_ON
E_REC
1000 1200
Fig. 5 Typical switching energy vs collector current
3.2
T_case = 125˚C
2.8
V_GE = 15V
V_CE = 900V
I_C = 1200A
L = 50nH
2.4
E_ON
2.0
1.6
E_OFF
1.2
0.8
0.4
E_REC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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