GP800NSM33 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – Hi-Reliability Single Switch IGBT Module Preliminary Information

GP800NSM33
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
T_case = 25˚C
V_ge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
1600
1400
1200
1000
T_j = 25˚C
T_j = 125˚C
800
600
400
200
0
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, V_F - (V)
Fig.5 Diode typical forward characteristics
1800
1600
1400
1200
1000
800
600
400 ^Tcase ^{= 125˚C}
V_ge = ±15V
200
R_g(ON) = 3.3Ω
R_g(OFF) = 6.8Ω
C_GE = 440nF
0
0 500 1000
1500
2000
2500
3000
Collector-emitter voltage, V_ce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com