GP800NSM33 Datasheet, PDF (3/9 Pages) Dynex Semiconductor – Hi-Reliability Single Switch IGBT Module Preliminary Information

GP800NSM33
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I
Collector cut-off current
CES
I_GES
V_GE(TH)
V
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I_FM
Diode maximum forward current
V_F
Diode forward voltage
C_ies
Input capacitance
L
Module inductance
M
Test Conditions
V_GE = 0V, V_CE = V_CES
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
V
GE
=
±20V,
V
CE
=
0V
I_C = 120mA, V_GE = V_CE
V_GE = 15V, I_C = 800A
V_GE = 15V, I_C = 800A, T_case = 125˚C
DC, T = 125˚C, T = 70˚C
vj
case
t_p = 1ms, T_case = 110˚C
I_F = 800A
I_F = 800A, T_case = 125˚C
V_CE = 25V, V_GE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
2
mA
-
-
70 mA
-
-
12 µA
4.5
5.5
6.5
V
-
3.4
4.3
V
-
4.3
5
V
-
-
800 A
-
-
1600 A
-
2.3
2.9
V
-
2.4
3
V
-
200
-
nF
-
15
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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