GP2400ESM18 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Hi-Reliability Single Switch IGBT Module

GP2400ESM18
TYPICAL CHARACTERISTICS
4800
4200
Common emitter
T_case = 25˚C
V_ge = 20/15/12V
3600
3000
V_ge = 10V
2400
1800
1200
600
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
4800
4200
Common emitter
T_case = 125˚C
3600
3000
2400
V_ge = 20/15/12V
V_ge = 10V
1800
1200
600
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
1.4
T_case = 125˚C
V_GE = 15V
1.2 ^VCE ^{= 900V}
R_G = 2.2Ω
L = 50nH
1.0
0.8
0.6
0.4
E_OFF
E_ON
E_REC
0.2
0
0
400
800 1200 1600 2000 2400
Collector current, I_C - (A)
Fig. 5 Typical switching energy vs collector current
4.0
T_case = 125˚C
3.5
V_GE = 15V
V_CE = 900V
I_C = 2400A
L = 50nH
3.0
E_OFF
2.5
E_ON
2.0
1.5
1.0
0.5
E_REC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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