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| GP2400ESM18 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Hi-Reliability Single Switch IGBT Module | |||
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GP2400ESM18
ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
E
ON
Q
rr
I
rr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125ËC unless stated otherwise
Symbol
Parameter
t
d(off)
t
f
EOFF
td(on)
t
r
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 2400A
V
GE
=
±15V
V = 900V
CE
R
G(ON)
=
R
G(OFF)
=
2.2â¦
L ~ 50nH
I = 2400A, V = 50% V ,
F
R
CES
dIF/dt = 6000A/µs
Min. Typ. Max. Units
-
2050 2300 ns
-
250 350 ns
-
1100 1350 mJ
-
500 750 ns
-
400 600 ns
-
850 1000 mJ
-
500 650 µC
-
1000
-
A
-
350
-
mJ
Test Conditions
IC = 2400A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2â¦
L ~ 50nH
IF = 2400A, VR = 50% VCES,
dIF/dt = 5000A/µs
Min. Typ. Max. Units
-
2250 2600 ns
-
250 350 ns
-
1350 1650 mJ
-
600 850 ns
-
450 700 ns
-
1300 1500 mJ
-
850 1000 µC
-
1200
-
A
-
500
-
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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