DSF11060SG_14 Datasheet, PDF (5/6 Pages) Dynex Semiconductor – Fast Recovery Diode

DSF11060SG
PACKAGE DETAILS
(Alternative outline G includes gate connections, all other details are the same as M779b).
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
Ø58.5 max
Ø34 nom
Ø34 nom
Anode
Nominal weight: 310g
Clamping force: 12kN ±10%
Package outine type code: M779b
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
Recommendations for clamping power semiconductors
Thyristor and diode measurement with a multi-meter
Use of V , r on-state characteristic
TO T
Application Note
Number
AN4506
AN4839
AN4853
AN5001
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