DSF11060SG_14 Datasheet, PDF (1/6 Pages) Dynex Semiconductor – Fast Recovery Diode

DSF11060SG
DSF11060SG
Fast Recovery DioGH
DS4548 -  JXO\ 20/1 31791)
APPLICATIONS
s Snubber Diode For GTO Circuits
KEY PARAMETERS
V_RRM
I_F(AV)
I_FSM
Q_r
t_rr
6000V
400A
4200A
700µC
6.0µs
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Recovery Charge
VOLTAGE RATINGS
Type Number
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
Repetitive Peak
Reverse Voltage
V
RRM
V
6000
5800
5600
5500
Conditions
V = V + 100V
RSM
RRM
Lower voltage grades available.
CURRENT RATINGS
Symbol
Parameter
Double Side Cooled
I_F(AV)
I
F(RMS)
Mean forward current
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Outline type code: M779b.
See Package Details for further information.
Conditions
Max. Units
Half wave resistive load, T_case = 65^oC
T_case = 65^oC
T = 65^oC
case
Half wave resistive load, T = 65oC
case
T_case = 65^oC
T = 65^oC
case
400
A
631
A
585
A
265
A
420
A
365
A
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