DS1109SG Datasheet, PDF (5/7 Pages) Transys Electronics – RECTIFIER DIODE

10000
Conditions:
T_j = 150˚C
V_R = 100V
I_F = 1000A
1000
Conditions:
T_j = 150˚C
V_R = 100V
I_F = 1000A
DS1109SG
1000
100
100
0.1
I_F
Q_S
dI_F/dt
I_RM
1.0
10
100
Rate of decay of on-state current, dI_F/dt - (A/µs)
Fig.4 Total stored charge
30
450
I²t = β x t
2
25
425
20
400
10
0.1
1.0
10
100
Rate of decay of forward current, dI_F/dt - (A/µs)
Fig.5 Maximum reverse recovery current
0.1
Anode side cooled
Double side cooled
15
375
0.01
10
350
I²t
5
325
0
300
1
10 1 2 3 5 10 20 50
ms
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V_RRM at T_case 150˚C)
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0.001
0.001
0.01
Conduction ^{Effective thermal resistance}
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
1.0
10
Time - (s)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7