DS1109SG Datasheet, PDF (3/7 Pages) Transys Electronics – RECTIFIER DIODE

DS1109SG
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
Conditions
10ms half sine; T = 150^oC
case
V_R = 50% V_RRM - 1/4 sine
10ms half sine; T_case = 150^oC
V_R = 0
Max. Units
9.2
kA
422 x 10³ A²s
11.5
kA
660 x 10³ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c)
Thermal resistance - junction to case
R_th(c-h)
Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T
Storage temperature range
stg
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Clamping force 12.0kN
with mounting compound
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Reverse (blocking)
Min. Max. Units
- 0.032 ^oC/W
- 0.064 ^oC/W
- 0.064 ^oC/W
- 0.008 ^oC/W
- 0.016 ^oC/W
-
160
o_C
-
150
o_C
-55 175
o_C
11.5 13.5 kN
3/7
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