GP800NSS33 Datasheet, PDF (4/9 Pages) Dynex Semiconductor – Single Switch IGBT Module Preliminary Information

GP800NSS33
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise
Symbol
Parameter
t_d(off)
t_f
E
OFF
t_d(on)
t
r
E_ON
Q_rr
I_rr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
T_case = 125˚C unless stated otherwise
Symbol
Parameter
t_d(off)
t_f
E
OFF
t_d(on)
t_r
E
ON
Q_rr
I_rr
E_REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 800A
C
V_GE = ±15V
V_CE = 1800V
R_G(ON) = = 3.3Ω
R
G(OFF)
=
6.8Ω
C_GE = 440nF, L ~ 100nH
I = 800A, V = 1800V,
F
R
dI_F/dt = 3600A/µs-1
Min. Typ. Max. Units
-
3.2
-
µs
-
0.7
-
µs
-
1
-
J
-
1.1
-
µs
-
0.4
-
µs
-
1.2
-
J
-
750
-
µC
-
400
-
A
-
0.45
-
J
Test Conditions
I = 800A
C
V_GE = ±15V
V_CE = 1800V
R_G(ON) = = 3.3Ω
R_G(OFF) = 6.8Ω
C = 440nF, L ~ 100nH
GE
I_F = 800A, V_R = 1800V,
dI /dt
F
=
3000A/µs-1
Min. Typ. Max. Units
-
3.4
-
µs
-
1.1
-
µs
-
1.5
-
J
-
1.1
-
µs
-
0.5
-
µs
-
1.5
-
J
-
800
-
µC
-
650
-
A
-
0.7
-
J
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com