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| GP800NSS33 Datasheet, PDF (3/9 Pages) Dynex Semiconductor – Single Switch IGBT Module Preliminary Information | |||
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GP800NSS33
ELECTRICAL CHARACTERISTICS
T = 25ËC unless stated otherwise.
case
Symbol
Parameter
ICES
Collector cut-off current
IGES
VGE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF
Diode forward current
IFM
Diode maximum forward current
VF
Diode forward voltage
Cies
Input capacitance
LM
Module inductance
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125ËC
VGE = ±20V, VCE = 0V
I = 120mA, V = V
C
GE
CE
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, , Tcase = 125ËC
DC
t = 1ms
p
IF = 800A
IF = 800A, Tcase = 125ËC
VCE = 25V, VGE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
2
mA
-
-
70 mA
-
-
12 µA
4
-
7.5
V
-
3.6
4.3
V
-
4.5
5
V
-
-
800 A
-
-
1600 A
-
2.3
2.9
V
-
2.4
3
V
-
200
-
nF
-
15
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
www.dynexsemi.com
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