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| GP800FSS18 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Singles Switch IGBT Module | |||
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GP800FSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
t
d(off)
t
f
E
OFF
td(on)
t
r
E
ON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125ËC unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 800A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2â¦
L ~ 100nH
IF = 800A, VR = 50% VCES,
dIF/dt = 3500A/µs
Min. Typ. Max. Units
-
1000 1200 ns
-
200 300 ns
-
200 300 mJ
-
300 400 ns
-
200 300 ns
-
200 300 mJ
-
180 240 µC
-
450
-
A
-
120
-
mJ
Test Conditions
I = 800A
C
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
2.2â¦
L ~ 100nH
IF = 800A, VR = 50% VCES,
dI /dt
F
=
3000A/µs
Min. Typ. Max. Units
-
1200 1400 ns
-
250 350 ns
-
300 400 mJ
-
400 550 ns
-
250 350 ns
-
350 450 mJ
-
300 400 µC
-
525
-
A
-
190
-
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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