GP800FSS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Singles Switch IGBT Module

GP800FSS18
GP800FSS18
Singles Switch IGBT Module
Replaces January 2000 version, DS5261-2.0
DS5261-3.1 January 2001
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate With Al O Substrate
23
s Low Inductance Internal Construction
s Full 1800V Rating
s 800A Per Module
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
3.5V
800A
1600A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux C
External connection
C1
C2
G
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
C1
Aux E
ORDERING INFORMATION
Order As:
GP800FSS18
Note: When ordering, please use the complete part number.
G
E2
C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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