DS501ST Datasheet, PDF (4/6 Pages) Dynex Semiconductor – Rectifier Diode

DS501ST
CURVES
3000
2500
2000
1500
1000
500
T_j = 175ºC
T_j = 25ºC
00.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Instantaneous forward voltage, V_F - (V)
Fig.2 Maximum (limit) forward characteristics
450
I²t = β x t
2
400
20
350
15
300
I²t
10
250
5
200
0
150
1
10 1 2 3 5 10 20 50
ms
Cycles at 50Hz
Duration
Fig.4 Surge (non-repetitive) forward current vs time (with
50% V_RRM, T_case = 175˚C)
800
dc
1/2 wave
700
3 phase
6 phase
600
500
400
300
200
100
0
0 100 200 300 400 500 600 700 800
Mean on-state current, I_T(AV) - (A)
Fig.3 Power dissipation curves
1.0
Anode side cooled
0.1
Double side cooled
0.01
0.001
0.001
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side Single side
0.070
0.140
0.080
0.150
0.105
0.175
0.1425
0.2125
0.01
0.1
1
10
Time - (s)
Fig.5 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
4/5
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