DS501ST Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Rectifier Diode

DS501ST
SURGE RATINGS
Symbol
Parameter
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
Conditions
10ms half sine; T_case = 175^oC
V = 50% V - 1/4 sine
R
RRM
10ms half sine; T_case = 175^oC
V =0
R
Max. Units
8.8
kA
387 x 10³ A²s
11.0
kA
605 x 10³ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
Thermal resistance - junction to case
R_th(c-h)
Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T_stg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Clamping force 4.5kN
with mounting compound
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Reverse (blocking)
Min. Max. Units
-
0.07 ^oC/W
-
0.14 ^oC/W
-
0.14 ^oC/W
-
0.02 ^oC/W
-
0.04 ^oC/W
-
185
o_C
-
175
o_C
–55 200
o_C
4.0 5.0
kN
CHARACTERISTICS
Symbol
Parameter
I_RM
Peak reverse current
V
Threshold voltage
TO
r_T
Slope resistance
Conditions
At V_RRM, T_case = 175^oC
At T = 175˚C
vj
At T_vj = 175˚C
Min. Max. Units
-
30 mA
-
0.7
V
-
0.25 mΩ
www.dynexsemi.com
3/5