DRD560G90_15 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Rectifier Diode

DRD560G90
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
Irr
Peak reverse recovery current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 1200A peak, Tcase = 160°C
At VDRM, Tcase = 160°C
IF = 2000A, dIRR/dt =5A/µs
Tcase = 160°C, VR =100V
At Tvj = 160°C
At Tvj = 160°C
Min.
Max.
Units
-
2.95
V
-
100
mA
3300 5000
µC
140
170
A
-
1.0
V
-
1.575
m
CURVES
2500
2000
1500
1000
500
0
0
Vfm max 125ºC
Vfm min 125ºC
Vfm max 25ºC
Vfm min 25ºC
Vfm max 160ºC
Vfm min 160ºC
1
2
3
4
5
Instantaneous forward voltage, VF - (V)
Fig.2 Maximum & minimum on-state characteristics
Fig.3 Dissipation curves
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
Where A = -0.675901
B = 0.3995
C = 0.001796
D = -0.040301
these values are valid for T_j = 160°C for I_F 200A to 2000A
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