DRD560G90_15 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

DRD560G90
-3-
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
Test Conditions
10ms half sine, Tcase = 150°C
VR = 50% VRRM - ¼ sine
10ms half sine, Tcase = 150°C
VR = 0
Max.
8
0.32
10
0.5
Units
kA
MA²s
kA
MA²s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Rth(j-c) Thermal resistance – junction to case Double side cooled
DC
-
Single side cooled
Anode DC
-
Cathode DC
-
Rth(c-h) Thermal resistance – case to heatsink Clamping force 43kN
Double side
-
(with mounting compound) Single side
-
Tvj
Virtual junction temperature
-
Tstg
Storage temperature range
-55
Fm
Clamping force
11
Max. Units
0.032
0.064
0.064
.008
.016
°C/W
°C/W
°C/W
°C/W
°C/W
160 °C
175
°C
13
kN
3/7
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