DRD2690Y50_15 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Rectifier Diode

SEMICONDUCTOR
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
Irr
Peak reverse recovery current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 3000A peak, Tcase = 25°C
At VDRM, Tcase = 150°C
IF = 2000A, dIRR/dt =4A/µs
Tcase = 150°C, VR =100V
At Tvj = 150°C
At Tvj = 150°C
DRD2690Y50
Min.
-
-
-
-
-
-
Max. Units
1.25
V
100
mA
7500
µC
190
A
0.82
V
0.143
m
CURVES
11000
10000
9000
25ºC
150ºC
8000
7000
6000
5000
4000
3000
2000
1000
0
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
Instantaneous Forward Voltage , V_FM - ( V )
8000
7000
6000
5000
4000
3000
2000
1000
0
0
dc
180sine
120 square
60 square
30 square
1000 2000 3000 4000 5000 6000
Mean on-state Current (A)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
Where A = - 0.630059
B = 0.2338835
C = 0.000166
D = - 0.009367
these values are valid for T_j = 150°C for I_F 1000A to 11000A
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