DRD2690Y50_15 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

SEMICONDUCTOR
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
DRD2690Y50
-3-
Test Conditions
10ms half sine, Tcase = 150°C
VR = 50% VRRM - ¼ sine
10ms half sine, Tcase = 150°C
VR = 0
Max.
44
9.68
55
15.12
Units
kA
MA²s
kA
MA²s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max. Units
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 43kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
-
Anode DC
-
Cathode DC
-
Double side
-
Single side
-
-
-
-55
38.0
0.0095
0.019
0.019
0.002
0.004
160
150
150
47.0
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
3/7
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