DRA170E44 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Avalanche Diode

DRA170E44
CHARACTERISTICS
Symbol
Parameter
Test Conditions
VFM
PRSM
Forward voltage
Non-repetitive peak avalanche
power
IRM
Peak reverse current
At 300A peak, Tcase = 25°C
10µs avalanche, Tvj = 150°C
At VRRM, Tcase = 150 ºC
At 50% VRRM, Tcase = 150 ºC
VTO
Threshold voltage
At Tvj = 150°C
rT
Slope resistance
At Tvj = 150°C
*This selection for series sharing only upon request
CURVES
Min.
-
-
-
1*
-
-
Max.
2.1
10
20
10*
1.12
3.75
Units
V
kW
mA
A
V
m
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves (double side cooled)
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
4/7
Where A = 0.576648
B = 0.116697
C = 0.003044
D = 0.007655
these values are valid for T_j = 150°C for I_F 10A to 500A
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