DRA170E44 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Avalanche Diode

DRA170E44
-3-
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
Test Conditions
10ms half sine, Tcase = 150°C
VR = 50% VRRM - ¼ sine
10ms half sine, Tcase = 150°C
VR = 0
Max.
1.5
11.25
1.8
16.2
Units
kA
kA²s
kA
kA²s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 3kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
-
Anode DC
-
Cathode DC
-
Double side
-
Single side
-
-
-
-55
2.5
Max. Units
0.115
0.27
0.27
0.02
0.04
165
150
150
3.8
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
3/7
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