DIM800DCM12-A000_15 Datasheet, PDF (4/8 Pages) Dynex Semiconductor – IGBT Chopper Module

DIM800DCM12-A000
ELECTRICAL CHARACTERISTICS
T_case = 25°C unless stated otherwise
Symbol
Parameter
t_d(off)
t_f
E_OFF
t_d(on)
t_r
E_ON
Q_rr
I_rr
E_rec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
T_case = 125°C unless stated otherwise
Symbol
Parameter
t_d(off)
t_f
E_OFF
t_d(on)
t_r
E_ON
Q_rr
I_rr
E_rec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I_C = 800A
V_GE = ±15V
V_CE = 600V
R_G(ON) = 2.7
R_G(OFF) = 2.7
L_S ~ 100nH
Diode arm
I_F = 800A
V_CE = 600V
dI_F/dt = 4200A/μs
Min Typ. Max Units
1250
ns
170
ns
130
mJ
250
ns
250
ns
80
mJ
80
μC
380
A
30
mJ
Test Conditions
I_C = 800A
V_GE = ±15V
V_CE = 600V
R_G(ON) = 2.7
R_G(OFF) = 2.7
L_S ~ 100nH
Diode arm
I_F = 800A
V_CE = 600V
dI_F/dt = 4000A/μs
Min Typ. Max Units
1500
ns
200
ns
160
mJ
400
ns
220
ns
120
mJ
160
μC
450
A
60
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com