DIM800DCM12-A000_15 Datasheet, PDF (1/8 Pages) Dynex Semiconductor – IGBT Chopper Module

Replaces DS5548-3
DIM800DCM12-A000
IGBT Chopper Module
DS5548-4 June 2014 (LN31687)
FEATURES
16 ±0.2 _{ 10µs Short Circuit Withstand}
 High Thermal Cycling Capability
 Non Punch Through Silicon
 Isolated AlSiC Base with AlN Substrates
 Lead Free construction
55.2 ± 0.3
A1P1P.8L5IC±A0T.2IONS
 High Reliability Inverters
 Motor Controllers
 Traction Drives
6 x O7^{KEY PARAMETERS}
V_CES
V_CE(sat) * (typ)
I_C
(max)
I_C(PK) (max)
28 ±0.5
1200V
2.7_sV_{crewing depth}
800_mA_{ax 8}
1600A
* Measured at the power busbars, not the auxiliary terminals
1(E)
5(E)
6(G)
2(C)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM800DCM12-A000 is a 1200V, n-channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module. The IGBT has a wide reverse
bias safe operating area (RBSOA) plus 10μs short
circuit withstand. This device is optimised for traction
drives and other applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
7(C)
3(C)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800DCM12-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1/8
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