DG646BH25_05 Datasheet, PDF (4/14 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG646BH25
Fig.2 Maximum gate trigger voltage/current vs junction
temperature
3000
2500
2000
1500
1000
500
Conditions:
125^oC
V_DM = V_DRM
dI_GQ/dt = 40A/us
0
0
1
2
3
4
5
6
Snubber Capacitance C_s - (uF)
Fig.3 On-state characteristics
Fig.4 Maximum dependence of ITCM on CS
Fig.5 Steady state sinusoidal wave conduction loss –
double side cooled
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