DG646BH25_05 Datasheet, PDF (3/14 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
CHARACTERISTICS
T_j = 125°C unless stated otherwise
Symbol
Parameter
VTM
IDM
IRRM
VGT
IGT
IRGM
EON
td
tr
EOFF
tgs
tgf
tgq
QGQ
QGQT
IGQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
DG646BH25
Test Conditions
Min
.
At 2000A peak, IG(ON) = 7A dc
-
VDRM = 2500V, VRG = 0V
-
At VRRM
-
VD = 24V, IT = 100A, Tj = 25°C
-
VD = 24V, IT = 100A, Tj = 25°C
-
VRGM = 16V, No gate/cathode resistor -
-
VD = 1500V
IT = 2000A, dIT/dt = 300A/µs
-
IFG = 30A, rise time < 1.0µs
-
-
-
IT = 2000A,
-
VDM = 2500V,
-
Snubber capacitor CS = 2.0µF,
-
diGQ/dt = 40A/µs
-
-
Max.
2.6
100
50
1.0
3.0
50
1188
1.2
3.0
4000
17.0
2.0
19.0
6600
13200
650
Units
V
mA
mA
V
A
mA
mJ
µs
µs
mJ
µs
µs
µs
µC
µC
A
3/14
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