DFM600BXS12-A000 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

SEMICONDUCTOR
DFM600BXS12-A000
1600
100
T_j = 25° C
T_j = 125° C
1400
V_F is measured at power busbars
and not the auxiliary terminals
1200
10
1000
800
600
1
400
200
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage, V_F - (V)
Fig.3 Diode Typical forward characteristics
1
2
3
4
Diode R_i (° C/KW) _{1.12 6.32 18.56 22.51}
t_i (ms)
0.10 3.21 38.58 113.97
0.1
0.001
0.01
0.1
1
10
Pulse width, t_p - (s)
Fig.4 Transient thermal impedance
2500
1000
2000
800
1500
600
1000
400
500
200
0
0
0
25
50
75
100
125
0
25
50
75
100
125
Case temperature, T_c - ° C
Case temperature, Tc - (° C)
Fig.5 Power dissipation
Fig.6 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
4/7
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