DFM600BXS12-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS
T_j = 25°C unless stated otherwise.
Symbol
Parameter
IRM
Peak reverse current
VF
Forward voltage
L
Inductance (module)
Test Conditions
VR = 1200V, Tj = 125° C
IF = 600A
IF = 600A, Tj = 125° C
-
DYNAMIC ELECTRICAL CHARACTERISTICS
T_j = 25°C unless stated otherwise.
Symbol
Parameter
trr
Reverse recovery time
Irr
Reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
T_j = 125°C unless stated otherwise.
Test Conditions
IF = 600A,
dIF
 
VR = 600V
Symbol
Parameter
trr
Reverse recovery time
Irr
Reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF
 
VR = 600V
DFM600BXS12-A000
Min. Typ. Max. Units
-
-
10
mA
-
2.0
2.5
V
-
2.05 2.55
V
-
16
-
nH
Min. Typ. Max. Units
-
0.8
-
-
600
-
A
-
110
-
-
35
-
mJ
Min. Typ. Max. Units
-
0.6
-
-
640
-
A
-
170
-
-
65
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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