GP800DDS18 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Dual Switch IGBT Module

GP800DDS18
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I
Collector cut-off current
CES
I_GES
V
GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I
Diode maximum forward current
FM
V_F
Diode forward voltage
C_ies
Input capacitance
L
Module inductance
M
Test Conditions
V_GE = 0V, V_CE = V_CES
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
V_GE = ±20V, V_CE = 0V
I_C = 40mA, V_GE = V_CE
V_GE = 15V, I_C = 800A
V = 15V, I = 800A, , T = 125˚C
GE
C
case
DC
t_p = 1ms
I_F = 800A
I = 800A, T = 125˚C
F
case
V_CE = 25V, V_GE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
1
mA
-
-
25 mA
-
-
4
µA
4.5
5.5
6.5
V
-
3.5
4
V
-
4.3
5
V
-
-
800 A
-
-
1600 A
-
2.2
2.5
V
-
2.3
2.6
V
-
90
-
nF
-
20
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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