GP800DDS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Dual Switch IGBT Module

GP800DDS18
Replaces October 2000 version, DS5165-4.2
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate With Al O Substrate
23
s Low Inductance Internal Construction
s Full 1800V Rating
s 800A Per Arm
GP800DDS18
Dual Switch IGBT Module
DS5165-5.0 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1800V
3.5V
800A
1600A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800DDS18
Note: When ordering, please use the complete part number.
12(C²)
2(C₂)
7(C¹)
4(E₂)
1(E₁)
11(G²)
10(E²)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Dual switch circuit diagram
5
6
3
1
7
8
9
12
4
2
11
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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