GP400DDS18 Datasheet, PDF (3/11 Pages) Dynex Semiconductor – Dual Switch IGBT Module Preliminary Information

GP400DDS18
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I_CES
Collector cut-off current
I_GES
V
GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I
Diode forward current
F
I
Diode maximum forward current
FM
V_F
Diode forward voltage
C
Input capacitance
ies
L
Module inductance
M
Test Conditions
V_GE = 0V, V_CE = V_CES
V = 0V, V = V , T = 125˚C
GE
CE
CES case
V
GE
=
±20V,
V
CE
=
0V
I = 20mA, V = V
C
GE
CE
V_GE = 15V, I_C = 400A
V_GE = 15V, I_C = 400A, , T_case = 125˚C
DC
t_p = 1ms
I_F = 400A
I_F = 400A, T_case = 125˚C
V_CE = 25V, V_GE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
1
mA
-
-
12 mA
-
-
2
µA
4.5
5.5
6.5
V
-
3.5
4
V
-
4.3
5
V
-
400
-
A
-
800
-
A
-
2.2
2.5
V
-
2.3
2.6
V
-
45
-
nF
-
20
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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