GP400DDS18 Datasheet, PDF (1/11 Pages) Dynex Semiconductor – Dual Switch IGBT Module Preliminary Information

GP400DDS18
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
GP400DDS18
Dual Switch IGBT Module
Preliminary Information
DS5359-2.0 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
3.5V
400A
1600A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP400DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP400DDS18
Note: When ordering, please use the whole part number.
12(C²)
2(C₂)
7(C¹)
4(E₂)
1(E₁)
11(G²)
10(E²)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Dual switch circuit diagram
5
6
3
1
7
8
9
12
4
2
11
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com